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 SB120 thru SB160
Vishay Semiconductors
formerly General Semiconductor
Schottky Barrier Rectifier
DO-204AL (DO-41)
Reverse Voltage 20 to 60V Forward Current 1.0A
Features
1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA.
Dimensions in inches and (millimeters)
0.205 (5.2) 0.160 (4.1)
* Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Low power loss, high efficiency * For use in low voltage high frequency inverters, free wheeling, and polarity protection applications * Guardring for overvoltage protection
Mechanical Data
Case: JEDEC DO-204AL molded plastic body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250C/10 seconds 0.375" (9.5mm) lead length, 5lbs. (2.3kg) tension Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.012 ounce, 0.34 gram
1.0 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) DIA.
Dimensions in inches and (millimeters)
Maximum Ratings and Thermal Characteristics (TA = 25C unless otherwise noted)
Parameter Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at 0.375" (9.5mm) lead length (See Fig. 1) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Typical thermal resistance
(1)
Symbol SB120 VRRM VRMS VDC IF(AV) IFSM RJA RJL TJ TSTG
(TA = 25C unless otherwise noted)
SB130 30 21 30
SB140 40 28 40 1.0 50 50 15
SB150 50 35 50
SB160 60 42 60
Unit V V V A A C/W
20 14 20
Operating junction temperature range Storage temperature range
-65 to +125 -65 to +150
-65 to +150
C C
Electrical Characteristics
Maximum instantaneous forward voltage at 1.0A (2) Maximum instantaneous reverse current at rated DC blocking voltage (2)
VF TA = 25C TA = 100C IR
0.48 0.5 10
0.65
V mA
5.0
Notes: (1) Thermal resistance junction to lead P.C.B. mounted 0.375" (9.5mm) lead length (2) Pulse test: 300s pulse width, 1% duty cycle
Document Number 88715 04-Jun-03
www.vishay.com 1
SB120 thru SB160
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves (TA = 25C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
1.0
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
50
Peak Forward Surge Current (A)
Average Forward Current (A)
0.75
Resistive or Inductive Load 0.375" (9.5mm) Lead Length SB150 & SB160
40
TJ = TJ max. 8.3ms Single Half Sine-Wave (JEDEC Method)
30
SB120 - SB140 0.5
20
0.25
10
0
0 0 25 50 75 100 125 150 175 1 10 100
Lead Temperature (C)
Number of Cycles at 60 HZ
Fig. 3 - Typical Instantaneous Forward Characteristics
50 100
Fig. 4 - Typical Reverse Characteristics
Instantaneous Reverse Current (mA)
SB120 - SB140 SB150 & SB160 10 TJ = 125C 1.0
Instantaneous Forward Current (A)
10
TJ = 125C TJ = 150C Pulse Width = 300s 1% Duty Cycle
1.0 TJ = 25C
0.1
TJ = 75C
0.1 SB120 - SB140 SB150 & SB160 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.01 TJ = 25C 0.001 0 20 40 60 80 100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Junction Capacitance
400 100
Fig. 6 - Typical Transient Thermal Impedance
Transient Thermal Impedance (C/W)
Junction Capacitance (pF)
TJ = 25C f = 1.0 MHZ Vsig = 50mVp-p
100
10
1
SB120 - SB140 SB150 & SB160 10 0.1 1 10 100
0.1 0.01
0.1
1
10
100
Reverse Voltage (V) www.vishay.com 2
Pulse Duration (sec.) Document Number 88715 04-Jun-03


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